Compared with traditional silicon devices, silicon carbide (SiC) devices have become the most viable candidate devices for the next generation of low-loss semiconductors due to their low on-resistance characteristics and excellent high-temperature, high-frequency and high-voltage performance. In addition, SiC allows designers to reduce the use of components, thereby further reducing the complexity of the design.

SiC power devices and modules are in a leading position in the field of development. These devices and modules have achieved better energy-saving effects in many industries.

SiC technology application:

High-efficiency inverters in DC/AC converters for solar and wind energy;

Power converters for electric and hybrid vehicles;

Power inverters for industrial equipment and air-conditioning equipment;

High voltage switch of X-ray generator;

thin film coating process